BUK455 DATASHEET PDF

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Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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TOAB; pin 2 connected to mounting base.

Typical turn-on gate-charge characteristics. VDD August 5 Rev 1. Normalised avalanche energy rating. Typical capacitances, Ciss, Coss, Crss.

Product specification This data sheet contains final product specifications. August 6 Rev 1. This data sheet contains final product specifications.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Typical reverse diode current. Exposure to limiting values for extended periods may affect device reliability. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Normalised continuous drain current. Application information Where application information is given, it is advisory and does not form part of the specification. Normalised drain-source on-state resistance. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UNIT – – 1. TOAB; pin 2 connected to mounting base. Refer to mounting instructions for TO envelopes.

C Philips Electronics N. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Normalised continuous drain current. Typical reverse diode current. Avalanche energy test circuit. Exposure to limiting values for extended periods may affect device reliability.

Product Categories | MOSFET | New Jersey Semiconductor

Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN.

August 7 Rev 1.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

Avalanche energy test circuit. Normalised avalanche energy rating. New Product View Product Index. August 6 Rev 1. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

No liability will be accepted by the publisher for any consequence of its use. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Stress above one or more of the limiting values may cause permanent damage to the device.

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(PDF) BUK455 Datasheet download

Normalised drain-source on-state resistance. Typical capacitances, Ciss, Coss, Crss. Application information Where buo455 information is given, it is advisory and does not form part of the specification. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

This data sheet contains target or goal specifications for product development. Refer to mounting instructions for TO envelopes. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

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