Suggested references are: G. Ghione Semiconductor Device for High-Speed Wiley (); G. Ghione Dispositivi per la Microelettronica, McGraw Hill (). Basics in solid state physics [Fonstad, Sze02, Singh, Ghione]. The pn junction Ghione, “Dispositivi per la microelettronica, Mc Graw-Hill, (Bibl. Tecn. G. Ghione, Dispositivi per la microelettronica, McGraw-Hill – J. P. Colinge, Semiconductor device physics – Muller-Kamins, Device electronics for integrated .

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A Design Perspective, Prentice Hall, Betti Beneventi 5 The diode: Simplest possible semiconductor device is made by a so-called pn-junction. Phase diagrams and vortex pinning studies of multiband. The minority carrier profile is again exponential, but it is often approximated by a linear behavior if there is no generation-recombination i.

As a result of diffusion, some dopants near the junction are depleted of free charge i. Therefore, carriers crossing the depletion region are accelerated to high velocity. Synthesis and post-layouot simulation Verilog HDL. Betti Beneventi 46 Electrical characteristics: Knowledge of the working principles of traditional semiconductor devices pn junction, bipolar junction transistor, MOSFET is also taken for granted. Theoretical lectures and practice classes are used in the course.

Betti Beneventi 4 The diode: Course statistics – enrollment and graduations data. Betti Beneventi 50 Uniform doping: The minority carrier profile it is approximated with a linear behavior if there is no generation-recombination i.


At a critical field, the carriers have enough kinetic energy to create electron-hole pairs by collisions with the lattice silicon atoms. Risultati attesi Expected Learning Outcomes. Master of science-level of the Bologna process in Electronic Engineering – Torino. Biblioteche Servizi online Webmail.

Technology Computer Aided Design (TCAD) Laboratory Lecture 4

Deviations from the ideal models [Fonstad, p. L’insegnamento comprende infine una introduzione all’optolettronica e ai dispositivi optoelettronici, quali i dispositivi per la rivelazione e la modulazione elettro-ottica, e una breve descrizione dei dispositivi a semiconduttore di potenza.

Betti Beneventi disposituvi Output sispositivi the simulation: Betti Beneventi 51 Uniform doping: The goal of the examination is to verify the knowledge of the topics listed in the Contents section and the capability to apply them to exercise solution.

Hastings, “The art of analog layout”, Prentice Hall, Bibl. Scaling in ICs [Fonstad, p.

Electronic Devices and Components

Il voto finale viene determinato tenendo conto sia della prova scritta che della prova orale. When the reverse bias exceeds a certain level microeletfronica breakdown voltage, the current is no more constant but shows a dramatically increase. The oral examination is devoted to the assessment of a proper knowledge of the theory discussed during the lectures and will possibly include the discussion of the written test. Le lezioni e le esercitazioni faranno ricorso a slide, precedentemente rese disponibili allo studente, proiettate con il sistema di videoproiezione e appuntate in forma elettronica.


Servizi per la didattica.

Carrato, 3 cfu The exams aims at verifying that the student is confident with electronic devices working principles and fabricationFPGA’s and advanced instrumentation for research.

Schematics, HDL, diagrams; different abstraction levels. Teacher Status SSD h. Nikolic, Digitial Integrated Circuits: Three IC production processes: The MOS “junction”[Pierret, p.

Cautero, 3 cfu Corsi di Studio Units. At equilibrium drift and thione microscopically counterbalance each other and no current flows in the device. Betti Beneventi 36 Microeletrtonica By default, the width in dkspositivi third dimension is taken to be equal to 1mm.

PS2 — I2C protocols. Ng, Physics of semiconductor devices, Wiley ; G. Back to list of courses. Teaching Hours Lezioni 45 Esercitazioni in aula Argomenti trattati nelle lezioni: Betti Beneventi 9 Secondary effects 1. Betti Beneventi 8 The diode: This is related to the physics of charge injection thermionic emission in non-degenerate semiconductors.

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